BAS21LL diode equivalent, high-voltage switching diode.
* High switching speed: trr ≤ 50 ns
* Low leakage current: IR ≤ 100 nA
* High reverse voltage VR ≤ 200 V
* Low capacitance: Cd ≤ 2 pF
* Ultra small SM.
* High-speed switching
* General-purpose switching
* Voltage clamping
* Reverse polarity protection
4. .
High-voltage switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
* High switching speed: trr ≤ 50 ns
* Low leakage current: IR ≤ 100 nA
* High .
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