BAS16DY-Q diode equivalent, high-speed dual switching diode.
* High switching speed: trr ≤ 4 ns
* Low capacitance
* Low leakage current
* Reverse voltage: VR ≤ 100 V
* Repetitive peak reverse voltage: VRRM ≤ 100.
3. Applications
* High-speed switching
* General-purpose switching
4. Quick reference data
Table 1. Quick ref.
High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
* High switching speed: trr ≤ 4 ns
* Low capacitance
* Low leakage curre.
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