BAS116L diode equivalent, low-leakage diode.
* Switching time typical: trr = 0.8 µs
* Low leakage current typical: IR = 3 pA
* Repetitive peak reverse voltage: VRRM ≤ 85 V
* Low capacitance typical: .
* Low-leakage current applications
* General-purpose switching
4. Quick reference data
Table 1. Quick referenc.
Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
* Switching time typical: trr = 0.8 µs
* Low leakage current typical.
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