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74HC2G16GW - Dual buffer gate

Download the 74HC2G16GW datasheet PDF. This datasheet also covers the 74HC2G16 variant, as both devices belong to the same dual buffer gate family and are provided as variant models within a single manufacturer datasheet.

General Description

The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device.

The 74HC2G16; 74HCT2G16 provides two buffers.

2.

Key Features

  • Wide supply voltage range from 2.0 V to 6.0 V.
  • High noise immunity.
  • CMOS low power dissipation.
  • Balanced propagation delays.
  • Unlimited input rise and fall times.
  • Complies with JEDEC standards:.
  • JESD8C (2.7 V to 3.6 V).
  • JESD7A (2.0 V to 6.0 V).
  • ESD protection:.
  • HBM JESD22-A114-D exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Orderi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (74HC2G16-nexperia.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
74HC2G16; 74HCT2G16 Dual buffer gate Rev. 2 — 2 February 2022 Product data sheet 1. General description The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • High noise immunity • CMOS low power dissipation • Balanced propagation delays • Unlimited input rise and fall times • Complies with JEDEC standards: • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V to 6.0 V) • ESD protection: • HBM JESD22-A114-D exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Ordering information Table 1.