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74HC2G16 - Dual buffer gate

General Description

The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device.

The 74HC2G16; 74HCT2G16 provides two buffers.

2.

Key Features

  • Wide supply voltage range from 2.0 V to 6.0 V.
  • High noise immunity.
  • CMOS low power dissipation.
  • Balanced propagation delays.
  • Unlimited input rise and fall times.
  • Complies with JEDEC standards:.
  • JESD8C (2.7 V to 3.6 V).
  • JESD7A (2.0 V to 6.0 V).
  • ESD protection:.
  • HBM JESD22-A114-D exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Orderi.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74HC2G16; 74HCT2G16 Dual buffer gate Rev. 2 — 2 February 2022 Product data sheet 1. General description The 74HC2G16; 74HCT2G16 is a high-speed Si-gate CMOS device. The 74HC2G16; 74HCT2G16 provides two buffers. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • High noise immunity • CMOS low power dissipation • Balanced propagation delays • Unlimited input rise and fall times • Complies with JEDEC standards: • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V to 6.0 V) • ESD protection: • HBM JESD22-A114-D exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Specified from -40 °C to +85 °C and -40 °C to +125 °C 3. Ordering information Table 1.