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74AHC2G00 - Dual 2-input NAND gate

General Description

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices.

They provide two 2-input NAND gates.

The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.

Key Features

  • Symmetrical output impedance.
  • High noise immunity.
  • ESD protection:.
  • HBM JESD22-A114F exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101C exceeds 1000 V.
  • Low power dissipation.
  • Balanced propagation delays.
  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C 3. Ordering information Table 1. Ordering information Type number Package Temperature range 74AHC2G00DP -40 °C to +125 °C Name TSSOP8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74AHC2G00; 74AHCT2G00 Dual 2-input NAND gate Rev. 5 — 7 March 2019 Product data sheet 1. General description The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features and benefits • Symmetrical output impedance • High noise immunity • ESD protection: • HBM JESD22-A114F exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • CDM JESD22-C101C exceeds 1000 V • Low power dissipation • Balanced propagation delays • Specified from -40 °C to +85 °C and from -40 °C to +125 °C 3. Ordering information Table 1.