NP6667SR mosfet equivalent, n and p-channel enhancement mode mosfet.
* N-channel:
VDS =30V,ID =10A
RDS(ON)=16mΩ (typical) @ VGS=10V
RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel:
VDS =-30V,ID =-15A
RDS(ON)=17.5mΩ (typical) @ VGS=-1.
General Features
* N-channel:
VDS =30V,ID =10A
RDS(ON)=16mΩ (typical) @ VGS=10V
RDS(ON)=20mΩ (typical) @ VGS=4.
Schematic diagram
The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Feature.
Image gallery
TAGS
Manufacturer
Related datasheet