NP6667SR mosfet equivalent, n and p-channel enhancement mode mosfet.
* N-channel：
VDS =30V，ID =10A
RDS(ON)=16mΩ (typical) @ VGS=10V
RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel：
VDS =-30V，ID =-15A
RDS(ON)=17.5mΩ (typical) @ VGS=-1.
General Features
* N-channel：
VDS =30V，ID =10A
RDS(ON)=16mΩ (typical) @ VGS=10V
RDS(ON)=20mΩ (typical) @ VGS=4.
Schematic diagram
The NP6667SR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
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