NP6666D6 datasheet, mosfet equivalent, natlinear

Features and benefits

* N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON.

Application

General Features
* N-channel： VDS =30V，ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P.

Description

Schematic diagram The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

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