NP6666D6 mosfet equivalent, n and p-channel enhancement mode mosfet.
* N-channel: VDS =30V,ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-30A RDS(ON)=14mΩ (typical) @ VGS=-10V RDS(ON.
General Features
* N-channel: VDS =30V,ID =30A RDS(ON)=9mΩ (typical) @ VGS=10V RDS(ON)=11mΩ (typical) @ VGS=4.5V P.
Schematic diagram
The NP6666D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
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