NP6661BQR mosfet equivalent, n and p-channel enhancement mode mosfet.
* N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V R.
General Features
* N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.
Schematic diagram
The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Featur.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 557.78KB)