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NP6661BQR Datasheet, natlinear

NP6661BQR mosfet equivalent, n and p-channel enhancement mode mosfet.

NP6661BQR Avg. rating / M : 1.0 rating-112

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NP6661BQR Datasheet

Features and benefits


* N-channel: VDS =30V,ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V R.

Application

General Features
* N-channel: VDS =30V,ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.

Description

Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Featur.

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TAGS

NP6661BQR
And
P-Channel
Enhancement
Mode
MOSFET
natlinear

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