NP6608QR mosfet equivalent, 20v n and p-channel enhancement mode mosfet.
* N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel： VDS =-20V，ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5.
General Features
* N-channel： VDS =20V，ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.
Schematic diagram
The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
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