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NP6608QR Datasheet, natlinear

NP6608QR mosfet equivalent, 20v n and p-channel enhancement mode mosfet.

NP6608QR Avg. rating / M : 1.0 rating-11

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NP6608QR Datasheet

Features and benefits


* N-channel: VDS =20V,ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.5V P-Channel: VDS =-20V,ID =-10A RDS(ON)=15.3mΩ (typical) @ VGS=-4.5.

Application

General Features
* N-channel: VDS =20V,ID =10A RDS(ON)=8.8mΩ (typical) @ VGS=4.5V RDS(ON)=11.3mΩ (typical) @ VGS=2.

Description

Schematic diagram The NP6608QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

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TAGS

NP6608QR
20V
And
P-Channel
Enhancement
Mode
MOSFET
NP6608D6
NP6601AMR
NP6661BQR
natlinear

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