NP6608D6 mosfet equivalent, n and p-channel enhancement mode mosfet.
* N-channel：
VDS =20V，ID =8A
RDS(ON)=9.5mΩ (typical) @ VGS=4.5V
RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel：
VDS =-20V，ID =-8A
RDS(ON)=14mΩ (typical) @ VGS=-4.5.
General Features
* N-channel：
VDS =20V，ID =8A
RDS(ON)=9.5mΩ (typical) @ VGS=4.5V
RDS(ON)=13mΩ (typical) @ VGS=.
Schematic diagram
The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
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