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NP6608D6 Datasheet, natlinear

NP6608D6 mosfet equivalent, n and p-channel enhancement mode mosfet.

NP6608D6 Avg. rating / M : 1.0 rating-11

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NP6608D6 Datasheet

Features and benefits


* N-channel: VDS =20V,ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=2.5V P-Channel: VDS =-20V,ID =-8A RDS(ON)=14mΩ (typical) @ VGS=-4.5.

Application

General Features
* N-channel: VDS =20V,ID =8A RDS(ON)=9.5mΩ (typical) @ VGS=4.5V RDS(ON)=13mΩ (typical) @ VGS=.

Description

Schematic diagram The NP6608D6 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

Image gallery

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TAGS

NP6608D6
And
P-Channel
Enhancement
Mode
MOSFET
natlinear

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