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NP60S10D6 Datasheet, natlinear

NP60S10D6 mosfet equivalent, 100v n-channel enhancement mode mosfet.

NP60S10D6 Avg. rating / M : 1.0 rating-11

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NP60S10D6 Datasheet

Features and benefits


* VDS =100V,ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on).

Application

XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP60S10D6-G Storage Temperature -55°C to +.

Description

Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.

Image gallery

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TAGS

NP60S10D6
100V
N-Channel
Enhancement
Mode
MOSFET
natlinear

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