NP4886BD6 - 40V Dual N-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	NP4886BD6
Manufacturer	natLinear
File Size	824.89 KB
Description	40V Dual N-Channel Enhancement Mode MOSFET
Datasheet	NP4886BD6 Datasheet
Additional preview pages of the NP4886BD6 datasheet.

Product details

Description

Schematic diagram The NP4886BD6 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS and general purpose applications.General

Features

VDS =40V，ID =20A RDS(ON)=14mΩ (typical) @ VGS=10V RDS(ON)=18mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(ON) product(FOM).
Very low on-resistance RDS(ON).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Marking and pin assignment.

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Published: Jul 23, 2024 |