NP4606G mosfet equivalent, 30v n and p-channel enhancement mode mosfet.
* N-channel: VDS =30V,ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel: VDS =-30V,ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(.
D1/D2
General Features
* N-channel: VDS =30V,ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ V.
Schematic diagram
The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
D1/D2
General F.
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