NP35S03QR mosfet equivalent, 30v n-channel enhancement mode mosfet.
* VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistanc.
Schematic diagram
The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.
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