* VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V
* High power and current handing capability
* Lead free product is acquire.

D G General Features
* VDS =110V，ID =2A RDS(ON)(Typ.)=220mΩ @VGS=10V RDS(ON)(Typ.)=240mΩ @VGS=4.5V
* Hig.

Schematic diagram The NP2N11MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G Ge.

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