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NP12N30G Datasheet, natlinear

NP12N30G mosfet equivalent, 300v n-channel enhancement mode mosfet.

NP12N30G Avg. rating / M : 1.0 rating-11

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NP12N30G Datasheet

Features and benefits


* VDS =300V,ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low Rdson Marking and pin assignment
* Fully characterized avalanch.

Application

General Features
* VDS =300V,ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low .

Description

Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features
* VDS =300V,ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High d.

Image gallery

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TAGS

NP12N30G
300V
N-Channel
Enhancement
Mode
MOSFET
natlinear

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