NP12N30G - 300V N-Channel Enhancement Mode MOSFET

General Description

The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.

Key Features

VDS =300V，ID =12A RDS(ON)(Typ. )= 250mΩ @VGS=10V.
High density cell design for ultra low Rdson Marking and pin assignment.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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NP12N30G 300v n-channel enhancement mode mosfet by natlinear - Datasheet Preview

Datasheet Details

Part number	NP12N30G
Manufacturer	natlinear
File Size	619.27 KB
Description	300V N-Channel Enhancement Mode MOSFET
Datasheet	NP12N30G Datasheet

Full PDF Text Transcription for NP12N30G (Reference)

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NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charg...

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nced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features  VDS =300V，ID =12A RDS(ON)(Typ.

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