natlinear NP12N30G
The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.| Part No. | NP12N30G |
|---|---|
| Datasheet | NP12N30G Download |
| Manufacturer | natlinear |
| Description | 300V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagramGENERAL FEATURES
● VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V● High density cell design for ultra low Rdson Marking and pin assignment
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply Package
● TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP12N30G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Avalanche energy( L=0.5mH) Maximum power dissipation TC=25°C Operating junction Temperature range symbol limit unit VDS 300 V VGS ±20 V 12 ID A 10.8 IDM 48 A EAS 85 mJ PD 123 W Tj -55—150 ℃ Rev.1.1 —Jul. 26. 2023 1 Elect...
