VDS =300V，ID =12A
RDS(ON)(Typ.)= 250mΩ @VGS=10V High density cell design for ultra low Rdson
Marking and pin assignment
Fully characterized avalanche voltage and
current
Good stability a.
This website uses cookies or similar technologies, to enhance your browsing experience and provide personalized recommendations. By continuing to use our website, you agree to our Privacy Policy
File Size : 619.27KB ·
3
