NP12N30G datasheet, mosfet equivalent, natlinear

Features and benefits

* VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low Rdson Marking and pin assignment
* Fully characterized avalanch.

Application

General Features
* VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High density cell design for ultra low .

Description

Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features
* VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
* High d.

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