Ordering Information
Part Number LN2310
Storage Temperature -55°C to +150°C.
Absolute Maximum Ratings
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃
-pulse db Maximum power dissipation Operating junction Temperature range
Package SOT-23-3L
Devices Per Reel 3000
(TA=25℃ un.
N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor
■ General Description
VDSS 30V
Product Summary ID
5.8A 5A
RDS(ON)(mΩ)TYP 28 @ VGS=10V 31 @ VGS=4.5V
■ Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23-3L package
■ Package
SOT-23-3L
LN2310
■ Ordering Information
Part Number LN2310
Storage Temperature -55°C to +150°C
■ Absolute Maximum Ratings
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃
-pulse db Maximum power dissipation Operating junction Temperature range
Package SOT-23-3L
Devices Per Reel 3000
(TA=25℃ unless otherwise noted)
symbol
limit
unit
VDS 30 V
VGS ±20 V
ID 5.8 A
IDM 30 A
PD
1.25
W
Tj
-55—150
℃
Rev.1.0 —June. 5, 2012
1
www.natlinear.
LN2310 Datasheet
