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TIP36A - Complementary Silicon Power Transistor

Download the TIP36A datasheet PDF. This datasheet also covers the TIP35 variant, as both devices belong to the same complementary silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX. ) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min. ) - TIP35,TIP36 = 60Vdc (Min. ) - TIP35A,TIP36A = 80Vdc (Min. ) - TIP35B, TIP36B = 100Vdc (Min. ) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min. ) @ Ic = 1.5A H.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP35-nELL.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TIP36A COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
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TIP36A PNP SILICON POWER TRANSISTORS Power Innovations Limited
TIP36A SILICON POWER TRANSISTOR SavantIC
TIP36A Silicon PNP Transistor NTE

Other Datasheets by Nell Power Semiconductor

Part Number Description
TIP36 Complementary Silicon Power Transistor
TIP36B Complementary Silicon Power Transistor
TIP36C Complementary Silicon Power Transistor
TIP31 Complementary Silicon Power Transistor
TIP31A Complementary Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (Min.) - TIP35B, TIP36B = 100Vdc (Min.) - TIP35C, TIP36C DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=1.
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