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IRF640 - N-Channel Power MOSFET

Description

The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

Features

  • RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max. ) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.
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