IRF1010 mosfet equivalent, n-channel power mosfet.
RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy spec.
These transistors can be operated directly from integrated circuits.
G G D S TO-220AB (IRF1010A)
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FEATURES
RDS(O.
The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely e.
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