Datasheet4U Logo Datasheet4U.com

ISL71040M - Radiation Tolerant Low-Side GaN FET Driver

Description

3.

.

Features

  • an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M’s split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on an.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ISL71090SEHF25 Radiation Hardened Ultra Low Noise / Precision Voltage Reference Intersil Corporation
ISL7119RH Radiation Hardened High Speed Dual Voltage Comparator Intersil Corporation
ISL7124SRH Quad Operational Amplifiers Intersil Corporation
ISL70001SRH Radiation Hardened and SEE Hardened 6A Synchronous Buck Regulator Intersil Corporation
ISL72026SEH 3.3V Radiation Tolerant CAN Transceiver Intersil Corporation

Other Datasheets by Intersil (Renesas)

Part Number Description
ISL71041M Radiation Tolerant Single-Ended Current Mode PWM Controller
ISL71043M Radiation Tolerant Single-Ended Current Mode PWM Controller
ISL71001M 6A Synchronous Buck Regulator
ISL71010B25 2.5V Precision Voltage Reference
ISL71010B50 5V Precision Voltage Reference

Full PDF Text Transcription

Click to expand full text
ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs.
Published: |