TS2DDR2811 Overview
Key Features
- Wide Bandwidth (BW = 1100 MHz Typ)
- Low Crosstalk (XTALK = –37 dB Typ)
- Low Bit-to-Bit Skew (tsk(o) = 100 ps Max)
- Low and Flat ON-State Resistance (rON = 4 Ω Typ, rON(flat) = 0.5 Ω Typ)
- Low Input/Output Capacitance (CON = 8 pF Typ)
- Rail-to-Rail Switching on Data I/O Ports (0 V to 5 V)
- VCC Operating Range From 3 V to 3.6 V
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101)
