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TPS7H2201-SP - eFuse

General Description

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection.

The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5 V to 7 V and can support a maximum continuous current of 6 A.

Key Features

  • Standard micro circuit available, SMD 5962R17220.
  • Vendor item drawing available, VID V62/23608.
  • Radiation performance:.
  • Radiation hardness assurance (RHA) up to TID 100 krad(Si).
  • Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg.
  • SEFI/SET characterized to LET = 75 MeV-cm2/mg.
  • Integrated single channel eFuse.
  • Input voltage range: 1.5 V to 7 V.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPS7H2201-SP, TPS7H2201-SEP SLVSDO0C – SEPTEMBER 2018 – REVISED JUNE 2023 TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse 1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single channel eFuse • Input voltage range: 1.5 V to 7 V • Low on-resistance (RON) of : – 35-mΩ maximum at 25°C and VIN = 5 V for CFP and KGD – 21.