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TPS73734 - 1-A Low-Dropout Regulator

Download the TPS73734 datasheet PDF. This datasheet also covers the TPS737 variant, as both devices belong to the same 1-a low-dropout regulator family and are provided as variant models within a single manufacturer datasheet.

General Description

The TPS737 linear low-dropout (LDO) voltage regulator uses an NMOS pass transistor in a voltagefollower configuration.

This topology is relatively insensitive to the output capacitor value and ESR, allowing for a wide variety of load configurations.

Key Features

  • Stable with 1-μF or larger ceramic output capacitor.
  • Input voltage range: 2.2 V to 5.5 V.
  • Ultra-low dropout voltage.
  • Legacy silicon: 130 mV typical at 1 A.
  • New silicon, M3 suffix: 122 mV typical at 1 A.
  • Excellent load transient response.
  • even with only 1-μF output capacitor.
  • NMOS topology delivers low reverse leakage current.
  • Initial accuracy: 1%.
  • Overall accuracy over line, load, and temperature.
  • L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TPS737-etcTI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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TPS73025 300mA Fast Transient CMOS LDO Regulator HTC
TPS73028 300mA Fast Transient CMOS LDO Regulator HTC

Other Datasheets by Texas Instruments

Part Number Description
TPS73730 1-A Low-Dropout Regulator
TPS73733 1-A Low-Dropout Regulator
TPS73733-Q1 1-A Low-Dropout Regulator
TPS737 1-A Low-Dropout Regulator
TPS737-Q1 1-A Low-Dropout Regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPS737 SBVS067T – JANUARY 2006 – REVISED DECEMBER 2023 TPS737 1-A Low-Dropout Regulator With Reverse Current Protection 1 Features • Stable with 1-μF or larger ceramic output capacitor • Input voltage range: 2.2 V to 5.5 V • Ultra-low dropout voltage – Legacy silicon: 130 mV typical at 1 A – New silicon, M3 suffix: 122 mV typical at 1 A • Excellent load transient response—even with only 1-μF output capacitor • NMOS topology delivers low reverse leakage current • Initial accuracy: 1% • Overall accuracy over line, load, and temperature – Legacy silicon: 3% – New silicon, M3 suffix: 1.5% • Less than 20 nA typical IQ in shutdown mode • Thermal shutdown and current limit for fault protection • Available in multiple output voltage versions: – Adjustable output: 1.20 V to 5.