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TMS465169 - DYNAMIC RANDOM-ACCESS MEMORIES

General Description

The and TMS465169 is a high-speed, 67 108 864-bit dynamic random-access memory (DRAM) device organized as 4 194 304 words of 16 bits.

The TMS465169P is similar DRAM but includes a long refresh period and a self-refresh option.

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Other Datasheets by Texas Instruments

Part Number Description
TMS465169P DYNAMIC RANDOM-ACCESS MEMORIES
TMS465409 DYNAMIC RANDOM-ACCESS MEMORIES
TMS465409P DYNAMIC RANDOM-ACCESS MEMORIES
TMS46100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS46100P DYNAMIC RANDOM-ACCESS MEMORIES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) D Performance Ranges: ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC tCAC MAX MAX tAA MAX tHPC MIN ’46x169/P-50 50 ns 13 ns 25 ns 20 ns ’46x169/P-60 60 ns 15 ns 30 ns 25 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D Long Refresh Period and Self-Refresh Option ( TMS46x169P) D 3-State Unlatched Output D Low Power Dissipation D High-Reliability Plastic 50-Lead 400-Mil-Wide Surface-Mount Thin Small-Outline Package ( TSOP) (DGE Suffix) D Operating Free-Air Temperature Range 0°C to 70°C DEVICE TMS465169 TMS465169P AVAILABLE OPTIONS POWER SUPPLY SELFREFRESH, BATTERY BACKUP REFRESH CYCLES 3.3 V — 4 096 in 64 ms 3.