TMS44409P memories equivalent, dynamic random-access memories.
maximum RAS access times of
60 ns, 70 ns and 80 ns. Maximum power
consumption is as low as 385 mW operating and
6 mW standby. All inputs and outputs, including
clocks.
OE RAS
Output Enable Row-Address Strobe
The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each. This
VCC VSS W
5-V Supply Ground Write Enable
device features maximum RAS acc.
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