TMS44409P, TMS44409 - DYNAMIC RANDOM-ACCESS MEMORIES

Texas Instruments

The TMS44409P by Texas Instruments is a DYNAMIC RANDOM-ACCESS MEMORIES. Below is the official datasheet preview.

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TMS44409P DYNAMIC RANDOM-ACCESS MEMORIES by Texas Instruments - Datasheet Preview — Official preview page of the **TMS44409P** DYNAMIC RANDOM-ACCESS MEMORIES datasheet (Texas Instruments).

Datasheet Details

Part number	TMS44409P, TMS44409
Manufacturer	Texas Instruments
File Size	399.03 KB
Description	DYNAMIC RANDOM-ACCESS MEMORIES
Datasheet	TMS44409-etcTI.pdf
Note	This datasheet PDF includes multiple part numbers: TMS44409P, TMS44409. Please refer to the document for exact specifications by model.
Additional preview pages of the TMS44409P datasheet.

TMS44409P Product details

Description

OE RAS Output Enable Row-Address Strobe The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each.This VCC VSS W 5-V Supply Ground Write Enable device

Features

maximum RAS access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J.

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Published: Sep 9, 2019 |