Description
OE RAS
Output Enable Row-Address Strobe
The TMS44409 is a high-speed 4 194 304-bit dynamic random-access memory (DRAM) organized as 1 048 576 words of four bits each.This
VCC VSS W
5-V Supply Ground Write Enable
device
Features
- maximum RAS access times of
60 ns, 70 ns and 80 ns. Maximum power
consumption is as low as 385 mW operating and
6 mW standby. All inputs and outputs, including
clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system
design. Data out is unlatched to allow greater system flexibility. The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM. All versions of the TMS44409 / P are offered in a 300-mil 20 / 26 J.
TMS44409-etcTI.pdf
