TMS428169A memories equivalent, dynamic random-access memories.
maximum RAS access times of 50-, 60-, and 70 ns, and the
OE
RAS
VCC VSS W
Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
TMS428169A features .
of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION D.
PIN NOMENCLATURE
The TMS418169A and TMS428169A are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 1 048 576 words of
A[0:9] DQ[0:15] LCAS UCAS
Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Add.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 422.65KB)