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TMS28F400BZT - BOOT-BLOCK FLASH MEMORIES

Description

The TMS28F400BZx is a 524 288 by 8-bit / 262 144 by 16-bit (4 194 304-bit), boot-block flash memory that can be electrically block-erased and reprogrammed.

Features

  • user-selectable block erasure. The TMS28F400BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and.
  • 40°C to 85°C. device symbol nomenclature TMS28F400BZT 80 B DBJ L Temperature Range Designator L = 0°C to 70°C E =.
  • 40°C to 85°C Program/Erase Endurance B = 10 000 Cycles Boot Block Location Indicator T = Top Location B = Bottom Location Package Designator DBJ = Plastic Small-Outline Package Speed Designator 80 = 80 ns (± 10%.

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Other Datasheets by Texas Instruments

Part Number Description
TMS28F400BZB BOOT-BLOCK FLASH MEMORIES
TMS28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010B 131072 BY 8-BIT FLASH MEMORY
TMS28F020 262144 BY 8-BIT FLASH MEMORY
TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D Organization . . . 524 288 by 8 Bits 262 144 by 16 Bits D Array-Blocking Architecture − Two 8K-Byte Parameter Blocks − One 96K-Byte Main Block − Three 128K-Byte Main Blocks − One 16K-Byte Protected Boot Block − Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access/Minimum Cycle Time VCC ± 10% ’28F400BZx80 80 ns ’28F400BZx90 90 ns (x = top (T) or bottom (B) boot-block configuration ordered) D 10 000 Program/Erase-Cycles D Two Temperature Ranges − Commercial . . . 0°C to 70°C − Extended . . . − 40°C to 85°C D Low Power Dissipation ( VCC = 5.5 V ) − Active Write . . . 330 mW ( Byte Write) − Active Read . . . 330 mW ( Byte Read) − Active Write . . . 358 mW ( Word Write) − Active Read . . . 330 mW ( Word Read) − Block Erase . . . 165 mW − Standby . . . 0.
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