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TMS28F200BZT - BOOT-BLOCK FLASH MEMORIES

General Description

The TMS28F200BZx is a 262 144 by 8-bit / 131 072 by 16-bit (2 097 152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed.

Key Features

  • user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and.
  • 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = 0°C to 70°C E =.
  • 40°C to 85°C Program/Erase Endurance B = 10 000 Cycles Boot-Block Location Indicator T = Top Location B = Bottom Location Package Designator DBJ = Plastic Small-Outline Package Speed Designator 70 = 70 ns (± 10%.

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Other Datasheets by Texas Instruments

Part Number Description
TMS28F200BZB BOOT-BLOCK FLASH MEMORIES
TMS28F210 65536 BY 16-BIT FLASH MEMORY
TMS28F010A 1048576-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY
TMS28F010B 131072 BY 8-BIT FLASH MEMORY
TMS28F020 262144 BY 8-BIT FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program / Erase-Cycles D Three Temperature Ranges – Commercial . . . 0°C to 70°C – Extended . . . – 40°C to 85°C – Automotive . . . – 40°C to 125°C D Low Power Dissipation ( VCC = 5.5 V ) – Active Write . . . 330 mW ( Byte-Write) – Active Read . . . 330 mW ( Byte-Read) – Active Write . . . 358 mW ( Word-Write) – Active Read . . .