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TMS28F200BZT Datasheet BOOT-BLOCK FLASH MEMORIES

Manufacturer: Texas Instruments

Overview: D Organization . . . 262144 by 8 bit s 131 072 by 16 bits D Array-Blocking Architecture – Two 8K-Byte Parameter Blocks – One 96K-Byte Main Block – One 128K-Byte Main Block – One 16K-Byte Protected Boot Block – Top or Bottom Boot Locations D All Inputs / Outputs TTL Compatible D Maximum Access / Minimum Cycle Time VCC ± 10% ’28F200BZx70 70 ns ’28F200BZx80 80 ns ’28F200BZx90 90 ns (x = top (T) or bottom (B) boot-block configurations ordered) D 10000 Program / Erase-Cycles D Three Temperature Ranges – Commercial . . . 0°C to 70°C – Extended . . . – 40°C to 85°C – Automotive . . . – 40°C to 125°C D Low Power Dissipation ( VCC = 5.5 V ) – Active Write . . . 330 mW ( Byte-Write) – Active Read . . . 330 mW ( Byte-Read) – Active Write . . . 358 mW ( Word-Write) – Active Read . . . 330 mW ( Word-Read) – Block-Erase . . . 165 mW – Standby . . . 0.55 mW (CMOS-Input Levels) – Deep Power-Down Mode . . . 0.

Datasheet (PDF)

General Description

The TMS28F200BZx is a 262 144 by 8-bit / 131 072 by 16-bit (2 097 152-b

Key Features

  • user-selectable block-erasure. The TMS28F200BZx flash memory is offered in a 44-pin PSOP. It is available in two temperature ranges: 0°C to 70°C and.
  • 40°C to 85°C. device symbol nomenclature TMS28F200BZT 70 B DBJ L Temperature Range Designator L = 0°C to 70°C E =.
  • 40°C to 85°C Program/Erase Endurance B = 10 000 Cycles Boot-Block Location Indicator T = Top Location B = Bottom Location Package Designator DBJ = Plastic Small-Outline Package Speed Designator 70 = 70 ns (± 10%.

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