TMS28F200BZT
TMS28F200BZT is BOOT-BLOCK FLASH MEMORIES manufactured by Texas Instruments.
D Organization . . . 262144 by 8 bit s
131 072 by 16 bits
D Array-Blocking Architecture
- Two 8K-Byte Parameter Blocks
- One 96K-Byte Main Block
- One 128K-Byte Main Block
- One 16K-Byte Protected Boot Block
- Top or Bottom Boot Locations
D All Inputs / Outputs TTL patible D Maximum Access / Minimum Cycle Time
VCC ± 10%
’28F200BZx70 70 ns
’28F200BZx80 80 ns
’28F200BZx90 90 ns
(x = top (T) or bottom (B) boot-block configurations ordered)
D 10000 Program / Erase-Cycles D Three Temperature Ranges
- mercial . . . 0°C to 70°C
- Extended . . .
- 40°C to 85°C
- Automotive . . .
- 40°C to 125°C
D Low Power Dissipation ( VCC = 5.5 V )
- Active Write . . . 330 m W ( Byte-Write)
- Active Read . . . 330 m W ( Byte-Read)
- Active Write . . . 358 m W ( Word-Write)
- Active Read . . . 330 m W ( Word-Read)
- Block-Erase . . . 165 m W
- Standby . . . 0.55 m W (CMOS-Input
Levels)
- Deep Power-Down Mode . . . 0.0066 m W
D Fully Automated On-Chip Erase...
