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SN54ABT657A, SN74ABT657A
OCTAL TRANSCEIVERS WITH PARITY GENERATORS/CHECKERS AND 3-STATE OUTPUTS
SCBS192E – JANUARY 1991 – REVISED JUNE 1997
D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design
Significantly Reduces Power Dissipation
D ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
D Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D Typical VOLP (Output Ground Bounce) < 1 V
at VCC = 5 V, TA = 25°C
D High-Impedance State During Power Up
and Power Down
D Flow-Through Architecture Optimizes PCB
Layout
D High-Drive Outputs (–32-mA IOH, 64-mA IOL) D Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic
Chip Carriers (FK), and Plastic (NT) and
Ceramic (JT) DIPs
SN54ABT657A . . . JT PACKAGE SN74ABT657A . . .
SN54ABT657A Datasheet
