Datasheet4U Logo Datasheet4U.com

DRV8317 - Three-Phase PWM Motor Driver

Description

DRV8317 provides three integrated MOSFET halfbridges for driving three-phase brushless DC (BLDC) motors with 5-V, 9-V, 12-V, or 18-V DC rails or 2s to 4s batteries.

The device provides integrated threephase current sensing which eliminates the need for external sense resistors.

Features

  • Three-phase BLDC motor driver.
  • Configurable slew rate for EMI mitigation.
  • Programmable gain current sensing.
  • Supports up to 200-kHz PWM frequency.
  • Integrated shoot through protection.
  • 4.5-V to 20-V operating voltage.
  • 24-V absolute maximum voltage.
  • High output current capability.
  • 5-A peak current drive.
  • Low on-state resistance MOSFETs.
  • RDS(ON) (HS + LS) at TA = 25°C : 130-mΩ (typical).
  • Ult.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DRV101 PWM SOLENOID/VALVE DRIVER Burr-Brown Corporation
DRV102 PWM SOLENOID/VALVE DRIVER Burr-Brown Corporation
DRV103 PWM LOW-SIDE DRIVER Burr-Brown Corporation
DRV104 1.2A PWM High-Side Driver Burr-Brown Corporation
DRV1100 HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER Burr-Brown Corporation

Other Datasheets by Texas Instruments

Part Number Description
DRV8311 Three-Phase PWM Motor Driver
DRV8311H Three-Phase PWM Motor Driver
DRV8311P Three-Phase PWM Motor Driver
DRV8311S Three-Phase PWM Motor Driver
DRV8312 Three-Phase PWM Motor Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DRV8317 Three-Phase PWM Motor Driver DRV8317 SLVSGT3 – DECEMBER 2022 1 Features • Three-phase BLDC motor driver – Configurable slew rate for EMI mitigation – Programmable gain current sensing – Supports up to 200-kHz PWM frequency – Integrated shoot through protection • 4.5-V to 20-V operating voltage – 24-V absolute maximum voltage • High output current capability – 5-A peak current drive • Low on-state resistance MOSFETs – RDS(ON) (HS + LS) at TA = 25°C : 130-mΩ (typical) • Ultra-low Q-current sleep mode – 3-µA (max.
Published: |