CSD83325L datasheet, mosfet equivalent, Texas Instruments

Features and benefits

*1 Common Drain Configuration
* Low-On Resistance
* Small Footprint of 2.2 mm × 1.15 mm
* Lead Free
* RoHS Compliant
* Halogen Free
* Gate ESD.

Application

* Battery Management
* Battery Protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ pow.

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small.

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