CSD25211W1015 mosfet equivalent, p-channel power mosfet.
*1 Ultra-Low On Resistance
* Ultra-Low Qg and Qgd
* Small Footprint 1.0 mm × 1.5 mm
* Low Profile 0.62 mm Height
* Pb Free
* Gate-Source Voltage C.
* Battery Management
* Load Switch
* Battery Protection
3 Description
The device is designed to deliver the .
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.
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Product Summary
TA = 25°C unless otherwise stated
VDS
Drain-to-So.
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