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CSD19534Q5A - 100V N-Channel Power MOSFET

Description

This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19534Q5A SLPS483 – MAY 2014 CSD19534Q5A 100 V N-Channel NexFET™ Power MOSFETs 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 17 3.2 VGS = 6 V VGS = 10 V 2.8 14.1 12.6 UNIT V nC nC mΩ mΩ V 2 Applications • Primary Side Telecom • Motor Control 3 Description This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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