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CSD19534KCS Datasheet Preview

CSD19534KCS Datasheet

100V N-Channel Power MOSFET

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CSD19534KCS
SLPS530 – JANUARY 2015
CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 13.7 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
SPACE
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
16.4
3.3
VGS = 6 V
VGS = 10 V
2.8
16.3
13.7
UNIT
V
nC
nC
m
m
V
Device
CSD19534KCS
Ordering Information(1)
Package
Media
TO-220 Plastic Package Tube
Qty
50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
54
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
38
138
PD Power Dissipation
118
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 33 A, L = 0.1 mH, RG = 25
54
A
A
W
°C
mJ
(1) Max RθJC = 1.3°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
45
TC = 25°C, I D = 30 A
40 TC = 125°C, I D = 30 A
35
30
25
20
15
10
5
0
2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
10
ID = 30 A
VDS = 50 V
8
Gate Charge
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD19534KCS Datasheet Preview

CSD19534KCS Datasheet

100V N-Channel Power MOSFET

No Preview Available !

CSD19534KCS
SLPS530 – JANUARY 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 9
4 Revision History
DATE
January 2015
REVISION
*
NOTES
Initial release.
2 Submit Documentation Feedback
Product Folder Links: CSD19534KCS
Copyright © 2015, Texas Instruments Incorporated


Part Number CSD19534KCS
Description 100V N-Channel Power MOSFET
Maker etcTI
Total Page 11 Pages
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