CSD19533KCS datasheet, mosfet equivalent, Texas Instruments

Features and benefits

*1 Ultra-Low Qg and Qgd
* Low Thermal Resistance
* Avalanche Rated
* Pb Free Terminal Plating
* RoHS Compliant
* Halogen Free
* TO-220 Plastic.

Application

* Secondary Side Synchronous Rectifier
* Motor Control 3 Description This 100 V, 8.7 mΩ, TO-220 NexFET™ power MO.

Description

This 100 V, 8.7 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate .

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