Datasheet4U Logo Datasheet4U.com

CSD19532KTT - 100V N-Channel Power MOSFET

Description

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

.

Features

  • 1 Ultra-Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • D2PAK Plastic Package 2.

📥 Download Datasheet

📁 Similar Datasheet

  • CSD10060 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060A - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060B - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10060G - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10120 - ZERO RECOVERY RECTIFIER (ETC)
  • CSD10120D - ZERO RECOVERY RECTIFIER (ETC)
  • CSD1047 - TO-3P Fully Isolated Plastic Package Transistor (CDIL)
  • CSD1047F - TO-3P Fully Isolated Plastic Package Transistor (CDIL)
  • CSD1133 - (CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS (CDIL)
  • CSD1134 - (CSD1133 / CSD1134) PNP / NPN PLASTIC POWER TRANSISTORS (CDIL)
Other Datasheets by Texas Instruments

Full PDF Text Transcription

Click to expand full text
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19532KTT SLPS553 – OCTOBER 2015 CSD19532KTT 100 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Hot Swap • Motor Control 3 Description This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) .
Published: |