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CSD18532Q5B - N-Channel MOSFET

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General Description

This 2.5-mΩ, 60-V SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 44 6.9 VGS = 4.5 V VGS = 10 V 1.8 3.3 2.5 UNIT V nC nC mΩ V DEVICE CSD18532Q5B CSD18532Q5BT Device Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel SON 5.00-mm × 6.00-mm 250 13-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction Temperature, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 80 A, L = 0.1 mH, RG = 25 Ω 172 23 400 3.2 156 –55 to 150 320 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18532Q5B SLPS322D – NOVEMBER 2012 – REVISED FEBRUARY 2018 CSD18532Q5B 60-V N-Channel NexFET™ Power MOSFETs.

Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Low-Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Lead-Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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