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CSD18509Q5B - Power MOSFETs

Description

This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Features

  • 1 Ultra-Low On Resistance.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5-mm × 6-mm Plastic Package 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18509Q5B SLPS476A – JUNE 2014 – REVISED MAY 2017 CSD18509Q5B N-Channel NexFET™ Power MOSFETs 1 Features •1 Ultra-Low On Resistance • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 150 17 VGS = 4.5 V 1.3 VGS = 10 V 1.0 1.
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