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CSD17575Q3 - 30V N-Channe Power MOSFET

General Description

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Key Features

  • 1 Low Qg and Qgd.
  • Low RDS(on).
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 3.3 mm × 3.3 mm Plastic Package 2.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features •1 Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3 mm × 3.3 mm Plastic Package 2 Applications • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance Vth Threshold Voltage TYPICAL VALUE 30 23 5.4 VGS = 4.5 V VGS = 10 V 1.4 2.6 1.