C1969 transistor equivalent, silicon npn epitaxial planar type transistor.
* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
* Emitter ballasted construction for reliability and performance.
* Manufactured incorporating r.
Features
* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
* Emitter ballasted construction for rel.
The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications.
Features
* High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz
* Emitter b.
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