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PROCESS
CPD109R
Schottky Diode
Low VF Schottky Diode Chip
PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 8.3 x 8.3 MILS 3.9 MILS 5.4 x 5.4 MILS Al - 20,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYPE CFSH01-30L
R0 (13-April 2011)
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PROCESS
CPD109R
Typical Electrical Characteristics
R0 (13-April 2011)
w w w. c e n t r a l s e m i . c o m
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CPD109R Datasheet
