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Zibo Seno

RMB6S Datasheet Preview

RMB6S Datasheet

FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

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Z ibo Seno Electronic Engineering Co., Ltd.
RMB05S – RMB10S
Features
0.8A FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Surge Current Capability
! Designed for Surface Mount Application
! Plastic Material – UL Flammability 94V-O
-
B
+
H
~~
G
DE

Mechanical Data
! Case: MB-S, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: As Marked on Case
! Weight: 0.22 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
J
A
K
MB-S
Dim Min
Max
A 4.50
4.95
B 3.60
4.10
C 0.15
0.35
D — 0.20
E 6.40
7.00
G 0.50
1.10
H 1.30
1.70
J 2.30 2.70
K 2.30
2.70
L — 3.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol RMB RMB RMB
05S 1S 2S
RMB RMB RMB
4S 6S 8S
RMB
10S Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 200 400 600 800 1000 V
RMS Reverse Voltage
VR(RMS)
35 70 140 280 420 560 700
V
Average Rectified Output Current (Note 1) @TA = 40°C
Average Rectified Output Current (Note 2) @TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I2t Rating for Fusing (t < 8.3ms)
IO
IFSM
I2t
0.5
0.8
A
30 A
5.0 A2s
Forward Voltage per element
@IF = 0.8A
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 4)
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance per leg (Note 3)
VFM
IRM
trr
Cj
1.3
5.0
500
150 250
13
V
µA
500 nS
pF
Typical Thermal Resistance per leg (Note 1)
RJA
RJL
62.5
25
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
RMB05S - RMB10S
1 of 2
www.senocn.com




Zibo Seno

RMB6S Datasheet Preview

RMB6S Datasheet

FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

No Preview Available !

Z ibo Seno Electronic Engineering Co., Ltd.
RMB05S – RMB10S
1.0 10
0.8
1.0
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
30
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
20
10
0.1
0.01
0.6
Tj = 25°C
Pulse width = 300 µs
0.8 1.0 1.2 1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
Tj = 25°C
f = 1MHz
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
50NI (Non-inductive)
10NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
trr
100
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50.
-1.0A
Set time base for 5/10ns/cm
5 Reverse Recovery Time Characteristic and Test Circuit
RMB05S - RMB10S
2 of 2
www.senocn.com


Part Number RMB6S
Description FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Maker Zibo Seno
PDF Download

RMB6S Datasheet PDF






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