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ZXTP25020DFL - PNP Transistor

General Description

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Key Features

  • www. DataSheet4U. com.
  • High peak current Low saturation voltage E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat) < 85 mV @ 1A RCE(sat) = 54m⍀ PD = 350mW Complementary part number ZXTN25020DFL Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. C B Features www.DataSheet4U.com • • High peak current Low saturation voltage E Applications • • DC-DC converters MOSFET and IGBT gate driving E C B Ordering information Device ZXTP25020DFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Pinout - top view Device marking 1F2 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.