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ZVP2106C - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 60 Volt VDS.
  • RDS(on)=5Ω ZVP2106C G D REFER TO ZVP2106A FOR GRAPHS S.

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ZVP2106A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.net P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω ZVP2106C G D REFER TO ZVP2106A FOR GRAPHS S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -60 E-Line TO92 Compatible VALUE -280 -4 ± 20 UNIT V mA A V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 150 100 60 20 7 15 12 15 -1 5 -60 -1.5 -3.5 20 -0.5 -100 MAX. UNIT CONDITIONS.