ZTX601 Datasheet | Zetex Semiconductors

FEATURES - 160 Volt VCEO - 1 Amp continuous current - Gain of 5K at IC=1 Amp - Ptot= 1 Watt ZTX600 ZTX601 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX600 160 140 10 4 1 1 5.7 E-Line TO92 patible ZTX601 180 160 UNIT V V V A A W m W/ °C °C Operating and Storage Temperature Range -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 160 140 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.75 0.85 1.7 1.5 0.1 10 1.1 1.2 1.9 1.7 3-206 0.75 0.85 1.7 1.5 ZTX600 MIN. TYP. Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current ICBO 180 160 10 ZTX601 MAX. MIN. TYP. MAX. V V V µA µA µA µA µA µA µA UNIT CONDITIONS. IC=100µA IC=10m A- IE=100µA VCB=140V VCB=160V VCB=140V,T==100°C VCB=160V,T==100°C VEB=8V VCES=140V VCES=160V IC=0.5A, IB=5m A- IC=1A, IB=10m A- IC=1A, IB=10m A- IC=1A, VCE=5V- 0.01 10 0.1 Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 10 1.1 1.2 1.9 1.7 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL h FE ZTX600 ZTX601 MIN. TYP. Static Forward Current Transfer Ratio Group A Group B Transition Frequency Input Capacitance Output Capacitance Switching Times f T Cibo Cobo ton toff R5 = 50KΩ UNIT CONDITIONS. IC=50m A, VCE=10V- IC=0.5A, VCE=10V- IC=1A, VCE=10V- IC=50m A, VCE=10V- IC=0.5A, VCE=10V- IC=1A, VCE=10V- IC=50m A, VCE=10V- IC=0.5A, VCE=10V- IC=1A, VCE=10V- MHz IC=100m A, VCE=10V f=20MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5m A MAX. MIN. TYP. 1K 100K 2K 1K MAX. 100K 1K 2K 1K 1K 2K 1K 5K 10K 5K 150 2K 5K 3K 10K 20K 10K 250...