The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt
ZTX449
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 50 30 5 0.1 10 0.1 0.5 1 1.25 1 70 100 80 40 150 15 3-173 300 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. 50 30 5 2 1 1
E-Line TO92 Compatible VALUE UNIT V V V A A W °C
-55 to +200 UNIT V V V
µA µA µA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS.