830 Datasheet | Zetex Semiconductors

830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual mon cathode format in a wide rage of miniature surface mount packages. Features - Close tolerance C-V characteristics - High tuning ratio - Low IR (typically 200p A) - Excellent phase noise performance - High Q - Range of miniature surface mount packages Applications - VCXO and TCXO - Wireless munications - Pagers - Mobile radio - Where steeper CV slopes are required there is the 12V hyperabrupt range. ZC930, ZMV930, ZV930, ZV931 Series ISSUE 6 - JANUARY 2002 1 830 series TUNING CHARACTERISTICS at Tamb = 25°C PART Capacitance (p F) V R =2V, f=1MHz MIN. 829A 829B 830A 830B 831A 831B 832A 832B 833A 833B 834A 834B 835A 835B 836A 836B 7.38 7.79 9.0 9.5 13.5 14.25 19.8 20.9 29.7 31.35 42.3 44.65 61.2 64.6 90.0 95.0 NOM. 8.2 8.2 10.0 10.0 15.0 15.0 22.0 22.0 33.0 33.0 47.0 47.0 68.0 68.0 100.0 100.0 MAX. 9.02 8.61 11.0 10.5 16.5 15.75 24.2 23.1 36.3 34.65 51.7 49.35 74.8 71.4 110.0 105.0 250 250 300 300 300 300 200 200 200 200 200 200 100 100 100 100 Min Q V R =3V f=50MHz MIN. 4.3 4.3 4.5 4.5 4.5 4.5 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Capacitance Ratio C 2 / C 20 at f=1MHz MAX. 5.8 5.8 6.0 6.0 6.0 6.0 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5...